Used FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package-Digilog.pk Obstacle Avoidance and more using the TOOL

and more using the TOOL BOX Software

Dimensions: 40mm × 60mm

1   x  Buzzer   SB 36

Battery Type: Lithium-ion (3S)

Introducing the WX110(010) rotary wire wound potentiometer

Used FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package-Digilog.pk Obstacle Avoidance and more using the TOOLFGA50N100BNTD2 1000 V, 50 A NPT Trench IGBT with Built in Fast Diode, TO3P Package Product Description: The FGA50N100BNTD2 is a high performance 1000V, 50A N channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Built using trench gate and NPT (Non Punch Through) technology, this IGBT delivers excellent efficiency, fast switching speeds, and rugged reliability. It features a built in ultra fast recovery