Pay in 4 interest-free payments of $31.50 Learn more
Ships within 48 hours · Estimated delivery Aug 22 - Aug 27
35V with a CAS Latency of CL11
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank CAS Latency CL11 Configuration x8 Pieces in Kit 2
This 8GB (1x 8GB) DDR4 2400 MT/s RAM module from Samsung is for use in DDR4 compatible systems and operates at 2400 MT/s with an overall transfer rate of PC4-19200
2xM391A1K43BB1-CRC Capacity 16GB (2x 8GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3L 1600 MT/s 240-pin EUDIMM RAM module from Samsung
Hynix 8GB (1x 8GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-4gb-2x-sr-fm 35V with a CAS LatencyProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3L 1600 MT s 204 pin SODIMM RAM module from Hynix . This RAM module is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is
