Hynix 4GB (2x 2GB) DDR2-667 PC2-5300 1.8V DR x8 200-pin SODIMM RAM Kit Classification_ram-ddr3l-1066-rdimm-32gb-2x-qr 8V Technology DDR2 Error Correction

8V Technology DDR2 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration x4 Pieces in Kit 1 Compatibility

M393B2G70QH0-YK0Q9 Capacity 16GB (1x 16GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1

look up your specific model in our dedicated Apple Mac section

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL9 Configuration 16-chip 512M x8 Pieces in Kit 1 Compatibility

This 2GB (2x 1GB) DDR2 667 MT/s RAM kit from Samsung is for use in DDR2 compatible systems and operates at 667 MT/s with an overall transfer rate of PC2-5300

Hynix 4GB (2x 2GB) DDR2-667 PC2-5300 1.8V DR x8 200-pin SODIMM RAM Kit Classification_ram-ddr3l-1066-rdimm-32gb-2x-qr 8V Technology DDR2 Error CorrectionProduct Overview This 4GB (2x 2GB) DDR2 667 MT s Dual rank, x8 configuration RAM kit from Hynix is for use in DDR2 compatible systems and operates at 667 MT s with an overall transfer rate of PC2 5300. This RAM kit also operates at a standard voltage of 1. 8V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No. 2xHYMP125S64CP8 Y5